DPG60I300HA low loss and soft recovery high performance fast recovery diode single diode hiperfred2 1 3 part number DPG60I300HA backside: cathode fav rr tns 35 rrm 60 300 = v= v i= a features / advantages: applications: package: planar passivated chips very low leakage current very short recovery time improved thermal behaviour very low irm-values very soft recovery behaviour avalanche voltage rated for reliable operation soft reverse recovery for low emi/rfi low irm reduces: - power dissipation within the diode - turn-on loss in the commutating switch antiparallel diode for high frequency switching devices antisaturation diode snubber diode free wheeling diode rectifiers in switch mode power supplies (smps) uninterruptible power supplies (ups) to-247 industry standard outline rohs compliant epoxy meets ul 94v-0 ixys reserves the right to change limits, conditions and dimensions. 20131125b data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
DPG60I300HA n s 3.5 a t vj =c reverse recovery time a 9 35 65 n s i rm max. reverse recovery current i f =a; 60 25 t=125c vj -di f =a/s 200 /dt t rr v r =v 150 t vj =c 25 t=125c vj v = v symbol definition ratings typ. max. i r v i a v f 1.40 r 0.55 k/ w r min. 60 v rsm v 1 t = 25c vj t = c vj m a 0.35 v = v r t = 25c vj i = a f v t = c c 130 p tot 275 w t = 25c c r k/ w 60 300 max. non-repetitive reverse blocking voltage reverse current, drain current forward voltage drop total power dissipation conditions uni t 1.72 t = 25c vj 150 v f0 v 0.69 t = c vj 175 r f 5.8 m ? threshold voltage slope resistance for power loss calculation only a 150 v rrm v 300 max. repetitive reverse blocking voltage t = 25c vj c j 80 j unction capacitance v = v 150 t = 25c f = 1 mhz r vj p f i fsm t = 10 ms; (50 hz), sine; t = 45c vj max. forward surge current v = 0 v r t = c vj 175 550 a 300 fav d = rectangular 0.5 average forward current thermal resistance junction to case thjc thermal resistance case to heatsink thch fast diode 300 0.25 ixys reserves the right to change limits, conditions and dimensions. 20131125b data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
DPG60I300HA ratings product mar k in g date code part no. logo ixys abcd assembly code zyyww assembly line xxxxxxxxx d p g 60 i 300 ha part number diode hiperfred extreme fast single diode to-247ad (2) = = = current rating [a] reverse voltage [v] = = = = package t op c m d nm 1.2 mounting torque 0.8 t vj c 175 virtual junction temperature -55 weight g 6 symbol definition typ. max. min. conditions operation temperature unit f c n 120 mounting force with clip 20 i rms rms current 70 a per terminal 150 -55 to-247 similar part package voltage class dpg60im300pc to-263ab (d2pak) (2) 300 delivery mode quantity code no. part number marking on product ordering DPG60I300HA 585818 tube 30 DPG60I300HA standard t stg c 150 storage temperature -55 threshold voltage v 0.69 m ? v 0 max r 0 max slope resistance * 3.2 equivalent circuits for simulation t = vj i v 0 r 0 fast diode 175 c * on die level ixys reserves the right to change limits, conditions and dimensions. 20131125b data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
DPG60I300HA s ? p ? p1 d2 d1 e1 4 123 l l1 2x b2 2x b e 2x e2 d e q a a2 a1 c sym. inches millimeter min. max. min. max. a 0.185 0.209 4.70 5.30 a1 0.087 0.102 2.21 2.59 a2 0.059 0.098 1.50 2.49 d 0.819 0.845 20.79 21.45 e 0.610 0.640 15.48 16.24 e2 0.170 0.216 4.31 5.48 e 0.430 bsc 10.92 bsc l 0.780 0.800 19.80 20.30 l1 - 0.177 - 4.49 ? p 0.140 0.144 3.55 3.65 q 0.212 0.244 5.38 6.19 s 0.242 bsc 6.14 bsc b 0.039 0.055 0.99 1.40 b2 0.065 0.094 1.65 2.39 b4 0.102 0.135 2.59 3.43 c 0.015 0.035 0.38 0.89 d1 0.515 - 13.07 - d2 0.020 0.053 0.51 1.35 e1 0.530 - 13.45 - ? p1 - 0.29 - 7.39 1 3 outlines to-247 ixys reserves the right to change limits, conditions and dimensions. 20131125b data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
DPG60I300HA 0.0 0.4 0.8 1.2 1.6 2.0 20 40 60 80 100 120 0 200 400 600 40 50 60 70 80 10 0 10 1 10 2 10 3 10 4 0.1 1.0 0 40 80 120 160 0.2 0.4 0.6 0.8 1.0 1.2 1.4 k f t vj i d - ] c [ f /dt [a/ s] t[ms] 0 200 400 600 200 300 400 500 600 700 800 900 1000 2 3 4 5 6 7 8 9 10 0 200 400 600 4 6 8 10 12 14 16 18 20 0 200 400 600 0.2 0.3 0.4 0.5 0.6 0.7 q rr [ c] v f [v] -di f /dt [a/ s] z thjc [k/w] i rm q rr v fr t fr t vj =150c fig. 1 forward current i f versus v f fig. 2 typ. reverse recov. charge q rr versus -di f /dt fig. 3 typ. reverse recov. current i rm versus -di f /dt fig. 4 typ. dynamic parameters q rr ,i rm versus t vj fig. 5 typ. reverse recov. time t rr versus -di f /dt fig. 6 typ. forward recovery voltage v fr &timet fr versus di f /dt fig. 8 transient thermal impedance junction to case 25c i f [a] -di f /dt [a/ s] i rm [a] t rr [ns] -di f /dt [a/ s] t fr [ns] v fr [v] 0200400600 2 4 6 8 10 12 14 16 e rec [ j] -di f /dt [a/ s] fig. 7 typ. recovery energy e rec versus -di f /dt i f = 120 a 60 a 30 a i f = 120 a 60 a 30 a i f =120 a 60 a 30 a i f =120 a 60 a 30 a t vj = 125c v r =200 v t vj =125c v r = 200 v t vj = 125c v r =200 v t vj = 125c v r =200 v i f = 60 a t vj =125c v r = 200 v fast diode ixys reserves the right to change limits, conditions and dimensions. 20131125b data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
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